Select Publications

Re-designing the capacitor
from electrochemical to electrostatic energy storage for ultrahigh-density ultrafast-charging capacitors.

Cheema et al. Giant energy storage and power density negative capacitance superlattices.  Nature 629, 803-809 (2024).

Journal Publications

(bolded grey: FMD Group members)

Journal Publications

J21. Dipoles disordered by design to increase capacity of energy-storage devices.

P Behera, S Cheema

Nature 637, 1060-1062 (2025).

20. Ultrahigh purity plasma-enhanced atomic layer deposition and electrical properties of epitaxial scandium nitride. 

GB Rayner†, N O’Toole, B Liu, J Shallenberger, J Zhu, T Palacios, P Behera, S Cheema, B Johs, NA Strnad.

J. Vac. Sci. Technol. A 43, (2025).

19. Ultra Thin Body Silicon Transistors Down to 3 nm Si Channel.

J-H Park∗, L-C Wang∗, U Sikder, S-L Hsu, C-C Lee, C Garg, N Shanker, S Cheema, W Li, C Hu, S Salahuddin†.

IEEE Electron Device Letters 46, 258–261 (2025).

18. A New Back-End-of-Line Ferroelectric Field-Effect Transistor Platform via Laser Annealing.

SW Kim*, W Shin†*, R-H Koo*, J Kim*, J Im, D Koh, J-H Lee, S Cheema†, D Kwon†.

Small 2406376, (2024). 

17. Analog Reservoir Computing via Ferroelectric Morphotropic Phase Boundary Transistors.

J Kim*, EC Park*, W Shin*, R-H Koo, C-H Han, HY Kang, TG Yang, D Ha, S Cheema†, JK Jeong†, D Kwon†.

Nature Communications 15, 9147 (2024). 

16. Polarization Pruning: Reliability Enhancement of Hafnium-based Ferroelectric Devices for Memory and Neuromorphic Computing.

R-H Koo*, W Shin†*, J Yim, J Ko, G Jung, J Kim, J-J Kim, S Cheema, D Kwon†, and J-H Lee†.

Advanced Science 2407729, 11, 1-13 (2024).

15. Ultrafast high-endurance memory based on sliding ferroelectrics.

K Yasuda†, E Zalys-Geller, X Wang, D Bennett, S Cheema, K Watanabe, T Taniguchi, E Kaxiras, P Jarillo-Herrero†, R Ashoori†.

Science  385, 53-56 (2024).

14. Giant energy storage and power density negative capacitance superlattices.

S Cheema†*, N Shanker*, S-L Hsu*, J Schaadt, N Ellis, M Cook, R Rastogi, R Pilawa-Podgurski, J Ciston, M Mohamed, S Salahuddin†.

Nature 629, 803–809 (2024).

Press: IEEE Spectrum – This Microcapacitor Charges 100 Million Times Faster Than Lithium-ion Batteries: A materials tweak could push microcapacitors onto next-gen chips

Press: PC gamer – Super-tiny capacitors could enable a ‘whole new realm’ of ultra-efficient devices, maybe even handheld gaming PCs with more than 15 minutes of battery life

Press: Berkeley National Lab – Groundbreaking Microcapacitors Could Power Chips of the Future

Press: Berkeley Engineering – New generation of electrostatic capacitors could change the energy storage paradigm for microelectronics

Other Press: TechXplore, nanowerk, EurekAlert!, SciTechDaily, yahoo!tech

13.  Boost in Carrier Velocity due to Electrostatic Effects of Superlattice, Low EOT, Negative Capacitance Gate Stack.

C Garg, S Cheema, N Shanker, W Li, C Hu, S Salahuddin†. 

IEEE Electron Device Letters 45, 460–463 (2024).

12. In-Situ Measurement of Magnetoelectric Coupling in Multiferroic Nanocomposites of CoFe₂O₄ and Hf₀.₅Zr₀.₅O₂ with Residual Porosity.

SK Patel, DD Robertson, S Cheema, S Salahuddin, SH Tolbert†.

Nano Letters 23, 3267–3273 (2023).

11. Ultrathin ferroic HfO₂-ZrO₂ superlattice gate stack for advanced transistors.

S Cheema†*, N Shanker*, L Wang, CH Hsu, SL Hsu, Y Liao, M Jose, J Gomez, W Chakraborty, W Li, J Bae, S Volkman, D Kwon, Y Rho, G Pinelli, R Rastogi, D Pipitone, C Stull, M Cook, B Tyrrell, VA Stoica, Z Zhang, JW Freeland, CJ Tassone, A Mehta, G Saheli, D Thompson, DI Suh, W-T Koo, K-J Nam, DJ Jung, W-B Song, C-H Lin, S Nam, J Heo, N Parihar, C Grigoropoulos, P Shafer, P Fay, R Ramesh, S Mahapatra, J Ciston, S Datta, M Mohamed, C Hu, S Salahuddin†.

Nature 604, 65–71 (2022).

Featured: Science Special Issue Review – 75 Years of Transistors: Toward attojoule switching energy in logic transistors

Press: Berkeley News – Engineered crystals could help computers run on less power 

Press: Advanced Light Source – Multilayer Stack Opens Door to Low-Power Electronics

Other Press: The Daily Californian, Materials Today, physicsworld, COSMOS magazine, TechXplore, nanowerk, EurekAlert!

10. One nanometer HfO₂-based ferroelectric tunnel junctions on silicon.

S Cheema†*, N Shanker*, C-H Hsu, A Datar, J Bae, D Kwon, S Salahuddin†.

Advanced Electronic Materials 8, 2100499 (2022). 

Featured: Inside Front Cover

9. Emergent ferroelectricity in subnanometer binary oxide films on silicon.

S Cheema†*, N Shanker*, S-L Hsu*, C-H Hsu, Y Rho, VA Stoica, Z Zhang, JW Freeland, P Shafer, CP Grigoropoulos, J Ciston, S Salahuddin†.

Science 376, 648–652 (2022).

Press: Argonne National Lab – Thinnest ferroelectric material ever paves the way for new energy-efficient devices

Press: American Ceramic Society – Good things come in even smaller packages: ZrO₂ thin films on silicon show ferroelectricity down to 5 angstroms

Other Press: DOE Science News, Phys.org, EurekAlert!, nanowerk, Interesting Engineering

8. Electric Field-Induced Permittivity Enhancement in Negative-Capacitance FET.

Y-H Liao, D Kwon, S Cheema, N Shanker, AJ Tan, M-Y Kao, L-C Chen, C Hu, S Salahuddinc.

IEEE Transactions on Electron Devices 68, 1346–1351 (2021).

7. Enhanced ferroelectricity in ultrathin films grown directly on silicon.

S Cheema†*, D Kwon*, N Shanker, R dos Reis, S-L Hsu, J Xiao, H Zhang, R Wagner, A Datar, M R McCarter, CR Serrao, AK Yadav, G Karbasian, C-H Hsu, A J Tan, L-C Wang, V Thakare, X Zhang, A Mehta, E Karapetrova, RV Chopdekar, P Shafer, E Arenholz, C Hu, R Proksch, R Ramesh, J Ciston, S Salahuddin†.

Nature 580, 478–482 (2020).

Press: Berkeley Engineering – Researchers discover ferroelectricity at the atomic scale 

Press: Advanced Light Source – Unexpected rise in ferroelectricity as material thins

Other Press: Berkeley National Laboratory, Molecular Foundry, Berkeley Science Review, Phys.org, EurekAlert!, nanowerk, Tech Explorist, Oxford Instruments

6. Near Threshold Capacitance Matching in a Negative Capacitance FET With 1 nm Effective Oxide Thickness Gate Stack.

D Kwon*, S Cheema*, Y-K Lin, Y-H Liao, K Chatterjee, AJ Tan, C Hu, S Salahuddin†.

IEEE Electron Device Letters 41, 179–182 (2020).

5. Highly Scaled, High Endurance, -Gate, Nanowire Ferroelectric FET Memory Transistors. 

J-H Bae, D Kwon, N Jeon, S Cheema, AJ Tan, C Hu, S Salahuddin†.

IEEE Electron Device Letters 41, 1637–1640 (2020).

4. Experimental Demonstration of a Ferroelectric HfO2-Based Content Addressable Memory Cell. 

AJ Tan, K Chatterjee, J Zhou, D Kwon, Y-H Liao, S Cheema, C Hu, S Salahuddin†.

IEEE Electron Device Letters 41, 240–243 (2020).

3. Negative Capacitance FET With 1.8-nm-Thick Zr-Doped HfO₂ Oxide.

D Kwon*, S Cheema*, N Shanker, K Chatterjee, Y-H Liao, AJ Tan, C Hu, S Salahuddin†.

IEEE Electron Device Letters 40, 993–996 (2019).

2. Spatially resolved steady-state negative capacitance.

AK Yadav*, KX Nguyen*, Z Hong*, P Garcia*, CT Nelson, S Das, B Prasad, D Kwon, S Cheema, AI Khan, C Hu, J Iniguez, J Junquera, L-Q Chen, DA Muller, R Ramesh, S Salahuddin†.

Nature 565, 468–471 (2019).

1. Spin-orbit torques in ferrimagnetic GdFeCo alloys.

N Roschewsky, T Matsumura, S Cheema, F Hellman, T Kato, S Iwata, S Salahuddin†.

Applied Physics Letters 109, 112403 (2016).

Conference Publications

IEEE Conference Proceedings

 C8. Record Transconductance in Lₑff ∼ 30 nm Self-Aligned Replacement Gate ETSOI nFETs Using Low EOT Negative Capacitance HfO₂-ZrO₂ Superlattice Gate Stack.

LC Wang, W Li, N Shanker, S Cheema, S-L Hsu∗, S Volkman, U Sikder, C Garg, JH Park, YH Liao, YK Lin, C Hu, S Salahuddinc.

In 2023 IEEE Symposium on VLSI Technology and Circuits 1-2 (IEEE, 2023).

C7. CMOS Demonstration of Negative Capacitance HfO₂-ZrO₂ Superlattice Gate Stack in a Self-Aligned, Replacement Gate Process.

N Shanker∗, M Cook∗, S Cheema∗, W Li∗, R Rastogi, D Pipitone, C Chen, M Smith, S Meninger, F Bauer, G Pinelli, J Hunt, S Salahuddin, M Mohamedc.

In 2022 IEEE International Electron Devices Meeting (IEDM), 34.3.1-34.3.4 (IEEE, 2022).

C6. Quantitative study of EOT lowering in negative capacitance HfO₂-ZrO₂ superlattice gate stacks. 

M Hoffmann∗, S Cheema∗, N Shanker∗, W Li, and S Salahuddinc.

In 2022 IEEE International Electron Devices Meeting (IEDM), 13.2.1-13.2.4 (IEEE, 2022).

C5. Enhancement in Capacitance and Transconductance in 90 nm nFETs with HfO₂-ZrO₂ Superlattice Gate Stack for Energy-efficient Cryo-CMOS.

W Li, L-C Wang, S Cheema, N Shanker, C Hu, S Salahuddinc.

In 2022 IEEE International Electron Devices Meeting (IEDM), 22.3.1-22.3.4 (IEEE, 2022).

C4. On the PBTI Reliability of Low EOT Negative Capacitance 1.8 nm HfO₂-ZrO₂ Superlattice Gate Stack on Lg=90 nm nFETs.

N Shanker∗, L-C Wang∗, S Cheema, W Li, N Choudhury, C Hu, S Mahapatra, S Salahuddinc.

In 2022 IEEE Symposium on VLSI Technology and Circuits 421–422 (IEEE, 2022).

C3. Demonstration of Low EOT Gate Stack and Record Transconductance on Lg=90 nm nFETs Using 1.8 nm Ferroic HfO₂-ZrO₂ Superlattice.

W Li∗, L-C Wang∗, S Cheema, N Shanker, JH Park, Y-H Liao, S-L Hsu, C-H Hsu, SK Volkman, U Sikder, AJ Tan J-H Bae, C Hu, S Salahuddinc.

In 2021 IEEE International Electron Devices Meeting (IEDM), 13.6.1-13.6.4 (IEEE, 2021).

C2. FeFETs for Near-Memory and In-Memory Compute.

S Salahuddinc, A Tan, S Cheema, N Shanker, M. Hoffmann, J-H Bae.

In 2021 IEEE International Electron Devices Meeting (IEDM), 19.4.1-19.4.4 (IEEE, 2021).

C1. Towards the integration of HfZrO2-based Negative Capacitance Dielectrics on β-Ga₂O₃ Substrates.

GA Salcedo, AE Islam, M K Dietz, S Cheema, KD Leedy, KJ Liddy, AJ Green, W Wang, S Salahuddin, KD Chabak, JM Sattlerc.

In NAECON 2021 – IEEE National Aerospace and Electronics Conference 7–11 (IEEE, 2021).